Thursday, July 17, 2008

Samsung and Sun make ‘ultra-endurance’ flash chips

They claim to have jointly developed a single-layer cell (SLC) NAND flash device that provides a “five-fold increase” in data write/erase cycles over standard SLC flash. Though numbers aren’t provided that puts the technology at a healthy 50,000 read/write lifespan.

According to Samsung, the new flash memory is expected to deliver the highest endurance ever offered in high availability, mission-critical computing. The chip will also allow a 100x increase over conventional hard disk drives in the number of IOPS per watt.

News Timeline



From Our Sponsor